Molecular beam epitaxy of self-assembled GaSb-based quantum dot structures for the control of photoluminescence wavelengths towards 1.3 μm range

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 454-457

  Jiang, Chao ^a   Kobayashi, Shigeki ^a   Sakaki, Hiroyuki ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FLUXES; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY;

BLUESHIFT; CELL SHUTTER; DOT DENSITY; WAVELENGTH EMISSION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 23744440094     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. L. Müller-Kirsch, R. Heitz, U. W. Pohl, and D. Bimberg, Appl. Phys. Lett. 79(2001)1027.
2. I. Farrer, M. J. Murphy, D. A. Ritchie, A. J. Shields, J. Crystal Growth, 251(2003)771.
3. K. Suzuki, R. A. Hogg and Y. Arakawa, J. Appl. Phys. 85(1999)8349.
4. G. Liu and S. Chuang, J. Appl. Phys., 88(2000)5554.
5. G. Tuttle, H. Kroemer, J. H. English, J. Appl. Phys. 67(1990)3032.
6. A. Muller, Q. Q. Wang, P. Bianucci, and C. K. Shih, Appl. Phys. Lett. 84(2004)981.
7. C. Jiang, H. Sakaki, presented in "Quantum Dots 2004", Banff, Albert, Canada.