Beam-power heating effect on the synthesis of graded composition epitaxial Si1-xGex alloy layers

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 129, Issue 3, 1997, Pages 377-386

  Curello, G ^a,b   Gwilliam, R ^a   Harry, M ^a   Jackson, S ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b Siemens Microelectronics   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

SOLID PHASE EPITAXIAL (SPE) REGROWTH;

SILICON ALLOYS;

EID: 0031212763     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00326-1     Document Type: Article

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