Dopant profiling of ultra shallow As implanted in Si with and without spike annealing using medium energy ion scattering

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 72-76

  Abo, S ^a   Ichihara, S ^a   Lohner, T ^a   Wakaya, F ^a   Eimori, T ^b   Inoue, Y ^b   Takai, M ^a  

^a OSAKA UNIVERSITY   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Depth resolution; MEIS; RBS; Si; TEA

Indexed keywords

ANNEALING; ARSENIC; CRYSTALS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; SOLID STATE DEVICES;

DEPTH RESOLUTION; MEIS; RBS; TEA;

SILICON;

EID: 23444436385     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.080     Document Type: Conference Paper

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