Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 584-588

  Ichihara, S ^a   Nakagawa, T ^a   Nitta, M ^a   Abo, S ^a   Lohner, T ^a   Angelov, C ^a   Ohta, K ^b   Takai, M ^a  

^a OSAKA UNIVERSITY   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Depth resolution; MEIS; RBS; Si; SIMS; TEA

Indexed keywords

ADSORPTION; ANNEALING; COMPUTER SIMULATION; DOPING (ADDITIVES); ION IMPLANTATION; PROFILOMETRY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCATTERING; SECONDARY ION MASS SPECTROMETRY; SILICON;

DEPTH RESOLUTION; MEDIUM ENERGY ION SCATTERING (MEIS); SPIKE ANNEALING; TOROIDAL ELECTROSTATIC ANALYZERS (TEA);

ARSENIC;

EID: 2342523331     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.124     Document Type: Conference Paper

References (8)

1. The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, 2001.
2. Van der Veen J.F. Surf. Sci. Rep. 5:1985;199.
3. Smeenk R.G., Tromp R.M., Kerson H.H., Boerboom A.J.H., Saris F.W. Nucl. Instr. and Meth. 195:1982;581.
4. Kinomura A., Takai M., Matsumoto K., Namba S. Nucl. Instr. and Meth. B. 64:1992;576.
5. Kinomura A., Andoh H., Takai M. Nucl. Instr. and Meth. B. 77:1993;140.
6. Yokoi N., Andoh H., Takai M. Appl. Phys. Lett. 64:1994;19.
7. Takai M., Taketani M., Yokoi N. Nucl. Instr. and Meth. B. 118:1996;552.
8. Fujita M., Tajima J., Nakagawa T., Takai M., Schork R., Frey L., Ryssel H. Nucl. Instr. and Meth. B. 190:2002;26.