A Novel Planarization Process for Providing Global Planarity for IC Manufacturing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5288, Issue , 2003, Pages 813-818

  Shih, Wu Sheng ^a   Daffron, Mark G ^a  

^a BREWER SCIENCE INC   (United States)

Author keywords

Bi layer; Dual Damascene; Gap fill; IC Manufacturing; Planarization; Tri layer

Indexed keywords

BI-LAYERS; DEGREE OF PLANARIZATION (DOF); DUAL-DAMASCENE; GAP FILL; PLANARIZATION; TRI-LAYERS;

DIELECTRIC MATERIALS; LAYERED MANUFACTURING; PHOTOLITHOGRAPHY; PRESSING (FORMING); PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; SURFACE TOPOGRAPHY; THERMAL EFFECTS; THIN FILMS; ULTRAVIOLET RADIATION;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 2342640955     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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