Combined Electrical and Raman Characterization of C60 Based Organic Field Effect Transistors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5217, Issue , 2003, Pages 63-70

  Paez, Beynor A ^a   Bartzsch, Matthias ^a   Salvan, Georgeta ^a   Scholz, Reinhard ^a   Kampen, Thorsten U ^a   Zahn, Dietrich R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

C60; Fullerenes; OFET; Raman Spectroscopy; Transport properties

Indexed keywords

CARRIER MOBILITY; CHARGE TRANSFER; ELECTRIC FIELD EFFECTS; ELECTRODES; FULLERENES; MOLECULAR STRUCTURE; OXIDATION; RAMAN SPECTROSCOPY; SILICA; THICKNESS MEASUREMENT;

C60; OFET; TRANSPORT FACILITIES;

FIELD EFFECT TRANSISTORS;

EID: 2342639587     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.506019     Document Type: Conference Paper

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