Investigation of foreign particles in polycrystalline silicon using infrared microscopy

Solar Energy Materials and Solar Cells

Volumn 82, Issue 4, 2004, Pages 577-585

  Zhang, R ^a   Van Dyk, E E ^a,c   Rozgonyi, G A ^a   Rand, J ^b   Jonczyk, R ^b  

^a North Carolina State University   (United States)

^b GE ENERGY   (United States)

^c NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

Infrared microscopy; Polycrystalline Si; SiC particles; SiNO particles

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRON BEAMS; GRAIN BOUNDARIES; IMPURITIES; INFRARED RADIATION; SCANNING ELECTRON MICROSCOPY; SILICON SOLAR CELLS; STACKING FAULTS;

DISLOCATIONS; INFRARED MICROSCOPY; SIC PARTICLES; SINO PARTICLES;

POLYSILICON;

EID: 2342630559     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2003.11.031     Document Type: Article

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