Investigation of deep levels and precipitates related to molybdenum in silicon by DLTS and scanning infrared microscopy

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 116-121

  Sandhu, A ^a   Ogikubo, T ^a   Goto, H ^b   Csapo, V ^c   Pavelka, T ^c  

^a TOKAI UNIVERSITY   (Japan)

^b Nissei Bldg   (Japan)

^c SEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; ELECTRON ENERGY LEVELS; INFRARED RADIATION; LIGHT SCATTERING; MOLYBDENUM; OPTICAL MICROSCOPY; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

CARRIER LIFETIME; SCANNING INFRARED MICROSCOPY;

SILICON WAFERS;

EID: 0033896231     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00663-6     Document Type: Article

References (6)

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