Transient linear dichroism in InAs/GaAs self-assembled quantum dots

Physica Status Solidi C: Conferences

Volumn 1, Issue 3, 2004, Pages 585-588

  Tribollet, J ^a   Maingault, L ^a   Lemaitre A ^b   Sermage, B ^b   Gerard J M ^c   Bernardot, F ^a   Testelin, C ^a   Chamarro, M ^b  

^a SORBONNE UNIVERSITÉ   (France)

^b CNRS   (France)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL RELAXATION; CRYSTALLOGRAPHY; ELECTRONIC STRUCTURE; EXCITONS; LOGIC GATES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

EMISSION ENERGY; EXCITONIC TRANSITIONS; LINEAR DICHROISM; TRANSITION STRENGTHS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2342622725     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200304045     Document Type: Conference Paper

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