Effect of CeO2 on the microstructure and electrical properties of WO3 capacitor-varistor ceramics

Materials Science and Engineering: B

Volumn 110, Issue 1, 2004, Pages 6-10

  Yang, Xin Sheng ^a   Wang, Yu ^a   Dong, Liang ^a   Chen, Min ^a   Zhang, Feng ^a   Qi, Li Zhen ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Electrical properties; Microstructure; Schottky barrier; Tungsten trioxide; Varistor

Indexed keywords

CERAMIC MATERIALS; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; GRAIN BOUNDARIES; MATHEMATICAL MODELS; MICROSTRUCTURE; NETWORKS (CIRCUITS); SCHOTTKY BARRIER DIODES; VARISTORS;

SCHOTTKY BARRIER; TUNGSTEN TRIOXIDE;

CERIUM COMPOUNDS;

EID: 2342620773     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.01.016     Document Type: Article

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