Effect of sinter temperature on the electrical properties of TiO2-based capacitor-varistors

Materials Letters

Volumn 57, Issue 8, 2003, Pages 1400-1405

  Li, C P ^a   Wang, J F ^a   Su, W B ^a   Chen, H C ^a   Wang, Y J ^a   Zhuang, D X ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

Barriers; Electrical properties; Sintering temperature; Titania oxide; Varistors; Yttrium oxide

Indexed keywords

CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; GRAIN BOUNDARIES; PERMITTIVITY; SINTERING; THERMAL EFFECTS; TITANIUM DIOXIDE; YTTRIUM COMPOUNDS;

SINTER TEMPERATURE;

VARISTORS;

EID: 0037301889     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(02)00996-5     Document Type: Article

References (15)

1. Gupta T.K. Application of zinc oxide varistors. J. Am. Ceram. Soc. 73(7):1990;1817-1840.
2. Emtage P.R. The physics of zinc oxide varistors. J. Appl. Phys. 48(10):1977;4372-4384.
3. 2 varistors. Appl. Phys. Lett. 40:1982;536-537.
4. Yan M.F., Rhodes W.W. Grain Boundaries in Semiconductors. 1982;Elsevier, New York.
5. Yan M.F., Rhodes W.W. Additives and Interfaces in Electronic Ceramics. 1983;American Ceramic Society, Columbus, OH.
6. 2. 1982;357-362 Elsevier, New York.
7. Yang S.L., Wu J.M. Novel niobium-doped titania varistor with added barium and bismuth. J. Am. Ceram. Soc. 76(1):1993;145-152.
8. 3 system. Chin. Phys. Lett. 17(7):2000;530-531.
9. Makarov V., Trontel J.M. Novel varistor material based on tungsten oxide. J. Mater. Sci. Lett. 13:1994;937-939.
10. 5 varistor system. J. Mater. Sci. Lett. 16:1997;634-638.
11. Clarke D.R. Varistor ceramics. J. Am. Ceram. Soc. 82(3):1999;485-502.
12. 2 based varistor. J. Mater. Sci. 10:1999;321-327.
13. Lionel L.M., Philipp H.R. Zinc oxide varistors - a review. Ceram. Bull. 65(4):1986;639-646.
14. 2 ceramics: migration mechanism and roles of (Ba, Nb). J. Mater. Sci. 23:1988;4157-4164.
15. Gupta T.K., Carlson W.G. A grain-boundary defect model for instability/stability of a ZnO varistor. J. Mater. Sci. 20:1983;3487-3500.