Field effect transistors based on poly(3-hexylthiophene) at different length scales

Nanotechnology

Volumn 15, Issue 4, 2004, Pages

  Mas Torrent, M ^a   Den Boer, D ^a   Durkut, M ^a   Hadley, P ^a   Schenning, A P H J ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CHARGE CARRIERS; DEPOSITION; ELECTRIC RESISTANCE; ELECTRODES; ELECTRONIC EQUIPMENT; EVAPORATION; GOLD; HOLE MOBILITY; MICROSTRUCTURE; NONLINEAR OPTICS; OXIDATION; THIN FILM TRANSISTORS;

ELECTRODE SPACING; FIELD-EFFECT MOBILITIES; GATE VOLTAGE; LINEAR RESISTANCE;

FIELD EFFECT TRANSISTORS;

EID: 2342588783     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/4/028     Document Type: Conference Paper

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