Electrical and magnetic properties of Cd1-xZnxTe crystals

Journal of Alloys and Compounds

Volumn 371, Issue 1-2, 2004, Pages 183-185

  Savitskiy, A ^a   Parfenyuk, O ^a   Ilashchuk, M ^a   Fochuk, P ^a   Ivanchuk, R ^a   Ulianytskiy, K ^a   Siffert, P ^b  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

^b CNRS   (France)

Author keywords

Crystal growth; Electronic transport; Impurities in semiconductors; Point defects; Semiconductors

Indexed keywords

CRYSTAL GROWTH; CRYSTAL LATTICES; ELECTRON MOBILITY; MAGNETIC PROPERTIES; MAGNETIC SUSCEPTIBILITY; PARAMAGNETISM; POINT DEFECTS; POLARIZATION; RADIATION DETECTORS; SEMICONDUCTOR DOPING; TORSIONAL STRESS;

ELECTRICAL PROPERTIES; ELECTRONIC TRANSPORT; IMPURITIES IN SEMICONDUCTORS; INTRINSIC DEFECTS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 2342586657     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2003.07.043     Document Type: Conference Paper

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