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Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 4102-4104

Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells

(7) Liu, H F a Peng, C S a Likonen, J a,b Jouhti, T a Karirinne, S a Konttinen, J a Pessa, M a

a TAMPERE UNIVERSITY OF TECHNOLOGY (Finland)

b VTT TECHNICAL RESEARCH CENTRE OF FINLAND (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTALLOGRAPHY; DIELECTRIC FILMS; DIFFUSION; FILM GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NEODYMIUM LASERS; NITRIDES; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SPUTTERING; X RAY DIFFRACTION ANALYSIS;

BLUESHIFTS; DIELECTRIC CAPS; INTERDIFFUSION; THERMAL ANNEALING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 2342586619 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1687988 Document Type: Article

Times cited : (6)

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