Comparative study of the carbon nanotubes grown over metallic wire by cold plasma assisted technique

Carbon

Volumn 42, Issue 5-6, 2004, Pages 1113-1118

  Sarangi, D ^a   Karimi, A ^a  

^a EPFL   (Switzerland)

Author keywords

A. Carbon nanotubes; B. Growth parameters; C. SEM; D. Spiral periodicity, Plasma effect

Indexed keywords

ACETYLENE; ACTUATORS; CHEMICAL VAPOR DEPOSITION; COATING TECHNIQUES; ELECTRODES; PLASMAS; SCANNING ELECTRON MICROSCOPY; SENSORS; WIRE;

DIP COATING; GROWTH PARAMETERS; PLASMA EFFECT; SPIRAL PERIODICITY;

CARBON NANOTUBES;

EID: 2342576362     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2003.12.046     Document Type: Conference Paper

References (21)

1. Thostenson E.T., Li W.Z., Wang D.Z., Ren Z.F., Chou T.W. J. Appl. Phys. 91(9):2002;6034-6037.
2. Niu C.M., Sichel E.K., Hoch R., Moy D., Tennent H. Appl. Phys. Lett. 70(11):1997;1480-1482.
3. Baughman R.H., Cui C.X., Zakhidov A.A., Iqbal Z., Barisci J.N., Spinks G.M., et al. Science. 284(5418):1999;1340-1344.
4. Kong J., Franklin N.R., Zhou C.W., Chapline M.G., Peng S., Cho K.J., et al. Science. 287(5453):2000;622-625.
5. Ghosh S., Sood A.K., Kumar N. Science. 299(5609):2003;1042-1044.
6. Tibbetts G.G., Meisner G.P., Olk C.H. Carbon. 39(15):2001;2291-2301.
7. Bonard J.M., Kind H., Stöckli T., Nilsson S.A. Solid State Electron. 45(6):2001;893-914.
8. Journet C., Bernier P. Appl. Phys. A. 67(1):1998;1-9.
9. Bonard J.M., Stöckli T., Noury O., Châtelain A. Appl. Phys. Lett. 78(18):2001;2775-2777.
10. Sarangi D., Karimi A. Nanotechnology. 14(2):2003;109-112.
11. Croci M., Bonard J.M., Noury O., Stöckli T., Châtelain A. Chem. Vapor. Depos. 8(3):2002;89-92.
12. Noury O., Stöckli T., Croci M., Châtelain A., Bonard J.M. Chem. Phys. Lett. 346(5-6):2001;349-355.
13. Bonard J.M., Croci M., Conus F., Stöckli T., Noury O., Châtelain A. Appl. Phys. Lett. 81(15):2002;2836-2838.
14. Li W.H., Wen J.G., Ren Z.F. Appl. Phys. A. 74(3):2002;397-402.
15. Nerushev O.A., Morjan R.E., Ostrovskii D.I., Sveningsson, Jönsson M., Rohmund F., et al. Physica B. 323(1-4):2002;51-59.
16. Gao R.P., Wang Z.L., Fan S. J. Phys. Chem. B. 104(6):2000;1227-1234.
17. Li W.Z., Wen J.G., Tu Y., Ren Z.F. Appl. Phys. A. 73(2):2001;259-264.
18. Sarangi D., Arfaoui I., Bonard J.M. Physica B. 323(1-4):2002;165-167.
19. Ren Z.F., Huang Z.P., Xu J.W., Wang J.H., Bush P., Siegal M.P., et al. Science. 282(5391):1998;1105-1107.
20. Huang Z.P., Wang D.Z., Wen J.G., Sennett M., Gibson H., Ren Z.F. Appl. Phys. A. 74(3):2002;387-391.
21. Bower C., Zhu W., Jin S., Zhou O. Appl. Phys. Lett. 77(6):2000;830-832.