Lattice thermal conductivity of K 2(Bi 1-zSb z) 8Se 13 solid solutions

Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 4140-4146

  Kyratsi, Theodora ^a,b   Hatzikraniotis, Evripides ^b   Paraskevopoulous, M ^b   Dyck, Jeffrey S ^c,d   Shin, H K ^c   Uher, Ctirad ^c   Kanatzidis, Mercouri G ^a  

^a MICHIGAN STATE UNIVERSITY   (United States)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c UNIVERSITY OF MICHIGAN   (United States)

^d JOHN CARROLL UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC SITES; MASS FLUCTUATIONS; THERMAL DISPLACEMENT; THERMOELECTRIC MATERIALS;

COMPLEXATION; COMPOSITION; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; CRYSTALLOGRAPHY; DATA REDUCTION; ELECTRON MOBILITY; LOW TEMPERATURE EFFECTS; SUBSTITUTION REACTIONS; THERMAL CONDUCTIVITY;

SOLID SOLUTIONS;

EID: 2342540551     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1682674     Document Type: Article

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33. This formula is valid if the number of defects is smaller than the total amount of atoms.
34. The term (1 - z) becomes important in the case of solid solutions where the number of mixed sites (Bi/Sb) is comparable to the number of atoms.