Confined electronic structure in GaAs quantum dots

Journal of Luminescence

Volumn 108, Issue 1-4, 2004, Pages 379-383

  Yamagiwa, M ^a   Sumita, N ^a   Minami, F ^a   Koguchi, N ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Confined electronic structures; GaAs; Micro PL; Modified droplet epitaxy; Pressure dependence; Quantum dots

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; HIGH PRESSURE EFFECTS; MOLECULAR BEAM EPITAXY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

CONFINED ELECTRONIC STRUCTURE; MICRO-PL; MODIFIED DROPLET EPITAXY; PRESSURE DEPENDENCE;

PHOTOLUMINESCENCE;

EID: 2342533831     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2004.01.080     Document Type: Conference Paper

References (12)

1. Watanabe K., Koguchi N., Gotoh Y. Jpn. J. Appl. Phys. 39:2000;L79.
2. Ohtake A., Nakamura J., Tsukamoto S., Koguchi N., Natori A. Phys. Rev. Lett. 89:2002;206102.
3. Roach W.P., Chandrasekhar M., Chandrasekhar H.R., Chambers F.A. Phys. Rev. B. 44:1991;13404.
4. Go ñ i A.R., Cantarero A., Syassen K., Cardona M. Phys. Rev. B. 41:1990;10111.
5. Go ñ i A.R., Cantarero A., Schwarz U., Syassen K., Chevy A. Phys. Rev. B. 45:1992;4221.
6. Li G.H., Go ñ i A.R., Syassen K., Brandt O., Ploog K. Phys. Rev. B. 50:1994;18420.
7. Phillips J., Bhattacharya P., Venkateswaran U. Appl. Phys. Lett. 74:1999;1549.
8. Lambkin J.D., Adams A.R., Dunstan D.J., Dawson P., Foxon C.T. Phys. Rev. B. 39:1989;5546.
9. Sanguinetti S., Watanabe K., Kuroda T., Minami F., Gotoh Y., Koguchi N. J. Cryst. Growth. 242:2002;321.
10. Hohenester U., Di Felice R., Molinari E., Rossi F. Appl. Phys. Lett. 75:1999;3449.
11. Aspnes D.E. Phys. Rev. B. 14:1976;5331.
12. Lifshitz N., Jayaraman A., Logan R.A., Maines R.G. Phys. Rev. B. 20:1979;2398.