MBE growth and characterization of InAs/GaAs for infrared detectors

Physica Status Solidi C: Conferences

Volumn 1, Issue 2, 2004, Pages 392-395

  Reginski K ^a   Kaniewski, J ^a   Kosiel, K ^a   Przeslawski T ^a   Bak Misiuk J ^b  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DOPING (ADDITIVES); ELECTRON MOBILITY; GALLIUM COMPOUNDS; HALL EFFECT; HOLE MOBILITY; INDIUM COMPOUNDS; INFRARED DETECTORS; NUCLEATION; OPTOELECTRONIC DEVICES; SEMICONDUCTOR MATERIALS; SILICON; TRANSPORT PROPERTIES; X RAY DIFFRACTION ANALYSIS;

DOUBLE CRYSTALS; EPILAYERS; FLUX RATIO; GROWTH CONDITIONS;

MOLECULAR BEAM EPITAXY;

EID: 2342525208     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303944     Document Type: Conference Paper

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