Ion beam studies of hydrogen implanted Si wafers

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 747-750

  Nurmela, A ^a   Henttinen, K ^a   Suni, T ^a   Tolkki, A ^a   Suni, I ^a  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

ERDA; RBS; Silicon on insulator (SOI)

Indexed keywords

ANNEALING; BONDING; BORON; HYDROGEN; ION BEAMS; ION IMPLANTATION; OXIDATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON ON INSULATOR TECHNOLOGY;

ERDA; HYDROGEN IMPLANTATION; RBS; SOI;

SILICON WAFERS;

EID: 2342515395     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.155     Document Type: Conference Paper

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