Si-E (E = N, O, F) Bonding in a Hexacoordinated Silicon Complex: New Facts from Experimental and Theoretical Charge Density Studies

Journal of the American Chemical Society

Volumn 126, Issue 17, 2004, Pages 5563-5568

  Kocher, Nikolaus ^a   Henn, Julian ^a   Gostevskii, Boris ^b   Kost, Daniel ^b   Kalikhman, Inna ^b   Engels, Bernd ^a   Stalke, Dietmar ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; FLUORINE; NITROGEN; OXYGEN; TOPOLOGY;

CHARGE DENSITY; HYPERVALENCY;

SILICON COMPOUNDS;

FLUORINE; NITROGEN; OXYGEN; SILICON DERIVATIVE;

AB INITIO CALCULATION; ARTICLE; COMPLEX FORMATION; MOLECULAR INTERACTION; THEORETICAL STUDY;

EID: 2342488676     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja038459r     Document Type: Article

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