Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth

Journal of Crystal Growth

Volumn 266, Issue 1-3, 2004, Pages 34-39

  Wetzel, Th ^a   Virbulis, J ^b   Muiznieks, A ^c   Von Ammon, W ^a   Tomzig, E ^a   Raming, G ^a   Weber, M ^a  

^a SILTRONIC AG   (Germany)

^b Ctr for Proc Analysis and Research   (Latvia)

^c UNIVERSITY OF LATVIA   (Latvia)

Author keywords

A1. Fluid flows; A1. Heat transfer; A2. Czochralski method; A2. Single crystal growth; B2. Semiconducting silicon

Indexed keywords

COMPUTER SIMULATION; CRUCIBLES; FLOW OF FLUIDS; HEAT TRANSFER; INTERFACES (MATERIALS); PARAMETER ESTIMATION; SEMICONDUCTING SILICON; SINGLE CRYSTALS; TURBULENCE;

CZOCHRALSKI METHOD; GROWTH PARAMETERS; INTERFACE SHAPE; SINGLE CRYSTAL GROWTH;

CRYSTAL GROWTH FROM MELT;

EID: 2342472718     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.027     Document Type: Conference Paper

References (8)

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2. Evstratov Y., Kalaev V.V., Zhamakin A.I., Makarov Y.N., Abramov A.G., Ivanov N.G., Smirnov E.M., Dornberger E., Virbulis J., Tomzig E., von Ammon W. J. Crystal Growth. 230:2001;22.
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6. A. Krauze, A. Muiznieks, A. Muhlbauer, Th. Wetzel, E. Tomzig, L.L. Gorbunov, A. Pedchenko, J. Virbulis, Numerical 2D modelling of turbulent melt flow in CZ system with dynamic magnetic fields, International Workshop Modeling in Crystal Growth, Fukuoka, Japan, November 4-7, 2003.
7. Virbulis J., Wetzel Th., Muiznieks A., Hanna B., Dornberger E., Tomzig E., Muhlbauer A., von Ammon W. J. Crystal Growth. 230:2001;92.
8. D.P. Lukanin, V.V. Kalaev, T. Wetzel, J. Virbulis, W. von Ammon, Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in Si CZ growth, International Workshop Modeling in Crystal Growth, Fukuoka, Japan, November 4-7, 2003.