Stark effect in semiconductor nanocrystals: Tight-binding approach

Vacuum

Volumn 74, Issue 2, 2004, Pages 259-262

  Strozecka A ^a   Jaskolski W ^a   Zielinski M ^a   Bryant, Garnett W ^b  

^a NICOLAUS COPERNICUS UNIVERSITY   (Poland)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Artificial molecules; Quantum dots; Stark effect

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON DEVICES; ELECTRON ENERGY LEVELS; HAMILTONIANS; OPTICAL PROPERTIES; OPTIMIZATION; SEMICONDUCTOR QUANTUM DOTS;

ARTIFICIAL MOLECULES; QUBIT OPERATIONS; STARK EFFECT; STM;

NANOSTRUCTURED MATERIALS;

EID: 2342450057     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2003.12.135     Document Type: Conference Paper

References (15)

1. Tews M., Pfannkuche D. Phys Rev B. 65:2002;073307.
2. Sheng W., Leburton J.P. Phys Rev Lett. 88:2002;167401 Sheng W., Leburton J.P. Phys Rev B. 64:2001;153302.
3. Sheng W., Leburton J.P. Phys Rev Lett. 88:2002;167401 Sheng W., Leburton J.P. Phys Rev B. 64:2001;153302.
4. Zhang P., Zhao X.-.G. J Phys: Condens Matter. 13:2001;8389.
5. Shtrichman I., Metzner C., Gerardot B.D., Schoenfeld W.V., Petroff P.M. Phys Rev B. 65:2002;081303.
6. Chang K., Xia J.-.B. J Appl Phys. 84:1998;1454.
7. Wang L.-.M., Luo Y., Ma B.-.K. Int J Mod. Phys B. 16:2002;2791.
8. Strichman I., et al. Phys Rev B. 65:2002;081303.
9. Burkard G., Seelig G., Loss D. Phys Rev B. 62:2000;2581.
10. Millo O., Katz D., Cao Y., Banin U. Phys Rev Lett. 86:2001;5751.
11. Bryant G.W., Jaskólski W. Phys Rev B. 67:2003;205320.
12. Fraga S, Muszyńska J. Atoms in external fields. New York: Elsevier; 1981.
13. Mews A., Eychmüller A., Giersig M., Schooss D., Weller H. J Phys. Chem. 98:1994;934 Little R.B., El-Sayed M.A., Bryant G.W., Burke S. J Chem Phys. 114:2001;1813.
14. Mews A., Eychmüller A., Giersig M., Schooss D., Weller H. J Phys. Chem. 98:1994;934 Little R.B., El-Sayed M.A., Bryant G.W., Burke S. J Chem Phys. 114:2001;1813.
15. Jaskólski W., Bryant G.W., Planelles J., Zieliński M. Int I Quant. Chem. 90:2002;1075.