The effects of electric field on the electronic structure of a semiconductor quantum dot

Journal of Applied Physics

Volumn 84, Issue 3, 1998, Pages 1454-1459

  Chang, Kai ^a   Xia, Jian Bai ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; CALCULATIONS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; MATHEMATICAL MODELS; OPTICAL PROPERTIES;

BALDERESCHI AND LIPARI SPHERICAL MODEL; EFFECTIVE MASS ENVELOPE FUNCTION THEORY; ELECTRIC FIELD STRENGTH; EXCITON RECOMBINATION LIFETIME; OPTICAL TRANSITION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032133526     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368207     Document Type: Article

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