Improvement of the electrical properties of PECVD silicon oxide using high-density and low-ion-energy plasma post-treatment

Journal of Non-Crystalline Solids

Volumn 351, Issue 27-29, 2005, Pages 2232-2237

  Zhong, Chuan Jie ^a   Tanaka, Hiroaki ^b   Sugawa, Shigetoshi ^b   Ohmi, Tadahiro ^b  

^a JIANGNAN UNIVERSITY   (China)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRICAL ENGINEERING; GATES (TRANSISTOR); PLASMA APPLICATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS;

GATE VOLTAGE; ION ENERGY; LOW ION ENERGY PLASMA POST TREATMENT; SILICON OXIDE FILMS;

SILICON COMPOUNDS;

EID: 23144438118     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.06.016     Document Type: Article

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