Point defect modification in wide band gap semiconductors through interaction with high-energy electrons: Is reflection high-energy electron diffraction truly benign?

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 4, 2000, Pages 2295-2299

  Myers, T H ^a   Ptak, A J ^a   Vanmil, B L ^a   Moldovan, M ^a   Treado, P J ^b   Nelson, M P ^b   Ribar, J M ^b   Zugates, C T ^b  

^a WEST VIRGINIA UNIVERSITY   (United States)

^b ChemIcon Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23044521341     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

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