Improved model and temperature sensitivity analysis of a capacitive absolute pressure sensor

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 7, 2005, Pages 1369-1373

  Liu, Na ^a   Huang, Qing'an ^a   Qin, Ming ^a   Zhou, Minxin ^a  

^a Southeast University   (China)

Author keywords

Capacitive absolute pressure sensor; Improved model; Offset of temperature; Residual gas; Sensibility

Indexed keywords

COMPUTER SIMULATION; FINITE ELEMENT METHOD; SENSITIVITY ANALYSIS; SIGNAL PROCESSING; THERMAL EFFECTS;

CAPACITIVE ABSOLUTE PRESSURE SENSOR; IMPROVED MODEL; RESIDUAL GAS; TEMPERATURE OFFSET;

PRESSURE TRANSDUCERS;

EID: 23044512928     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. Blasquez G, Douziech C, Pons P. Analysis characterization and optimization of temperature coefficient parameters in capacitive pressure sensors. Sensors and Actuators, 2001, A93: 44
2. Blasquez G, Chauffleur X, Pons P, et al. Intrinsic thermal behaviour of capacitive pressure sensors. Sensors and Actuators, 2000, 85: 65
3. Paul O, Haberli A, Malcovati P, et al. Design of sealed cavity microstructure formed by silicon wafer bonding. Journal of Microelectromechanical System, 1993, 2(2): 74
4. Huang Q A, Qing M, Zhang H Z. Silicon wafer bonding for sealed vacuum microelectronic device. Proc 8th IEEE Vacuum Microelectron Conf, USA, 1995: 161
5. Senturia S D. Microsystem design. 2nd ed. Kluwer Academic Publishers, 2001
6. Timoshenko S P. Theory of plates and shells. New York: McGraw-Hill, 1959