Intrinsic thermal behaviour of capacitive pressure sensors: Mechanisms and minimization

Sensors and Actuators, A: Physical

Volumn 85, Issue 1, 2000, Pages 65-69

  Blasquez, G ^a   Chauffleur, X ^a   Pons, P ^a   Douziech, C ^a   Favaro, P ^a   Menini, Ph ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; OPTIMIZATION; PRESSURE GAGES; SILICON WAFERS; THERMOANALYSIS;

CAPACITIVE PRESSURE SENSORS; TEMPERATURE COEFFICIENTS; THERMO-MECHANICAL DEFORMATIONS;

HYBRID SENSORS;

EID: 0034251342     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00369-1     Document Type: Article

References (19)

1. Puers R. Capacitive sensors: when to use them. Sensors and Actuators, A: Physical. 37-38:1993;93-105.
2. Alwang W.G. Mechanical Sensors. 1994;VCH, New York.
3. Wolffenbuttel R.F. Silicon Sensors and Circuits. 1996;Chapman & Hall, London.
4. Lee Y.S., Wise K.D. A batch-fabricated silicon capacitive pressure transducer with low temperature sensitivity. IEEE Transactions of Electron Devices. ED-29(1):1982;42-48.
5. Ko W.H., Bao M.H., Hong Y.D. A high sensitivity integrated circuit capacitive pressure sensor with frequency-modulated output. Sensors and Actuators. (9):1986;345-351.
6. Smith M.J.S., Bowman L., Meindl J.D. Analysis design and performance of a capacitive pressure sensor IC. IEEE Transactions on Biomedical Engineering. BME-33:1986;163-174.
7. Jornod A., Rudolf F. High-precision capacitive absolute pressure sensor. Sensors and Actuators. 17:1989;415-421.
8. Puers B., Peeters E., Van Den Boosche A., Sansen W. A capacitive pressure sensor with low impedance output and active suppression of parasitic effects. Sensors and Actuators, A: Physical. 21-23:1990;108-114.
9. Hanneborg A., Ohlkers P. A capacitive silicon pressure sensor with low TCO and high long-term stability. Sensors and Actuators, A: Physical. 21-23:1990;151-154.
10. Nagata T., Terabe H., Kuwahara S., Sakurai S. Digital compensated capacitive pressure sensor using CMOS technology. Sensors and Actuators, A: Physical. 34:1992;173-177.
11. Catling D. High-sensitivity silicon capacitive sensors for measuring medium-vacuum gas pressure. Sensors and Actuators, A: Physical. 64:1998;157-164.
12. Plaza J.A., Esteve J., Lora-Tomayo E. Simple technology for bulk accelerometer based on bond and etch back silicon on insulator wafers. Sensors and Actuators, A: Physical. 68(1-3):1998;299-302.
13. Jordan J., Peter K., Renshaw D., Kent D. A capacitance ratio to frequency ratio converter using switched-capacitor techniques. Sensors and Actuators, A: Physical. 29:1991;133-139.
14. Blasquez G., Pons P., Menini P., Herbst D., Schulz M., Hofflinger B. Capacitive pressure sensor mock-up without compensation circuits. Technical Digest - 8th International Conference on Solid-State Sensors and Actuators (Transducers '95), Stockholm, Sweden, 25-29 June. 1995;628-631.
15. Blasquez G., Naciri Y., Blondel P., Ben Moussa E., Pons P. Capteurs de pression capacitifs au silicium micro-usinés. Technical Digest - 2nd International Conference on Passive Components, Paris, 18-20 November. 1987;142-146.
16. Wallis G., Pomerantz D.I. Field assisted glass-metal sealing. Journal of Applied Physics. 40(10):1969;3946-3950.
17. Ko W.H., Suminto J.T., Yeh G.J. Bonding Techniques for Microsensors Micromachining and Micropackaging of Transducers. 1985;41-61 Elsevier, Amsterdam.
18. Rogers T., Kowal J. Selection of glass, anodic bonding conditions and material compatibility for silicon glass capacitive sensors. Sensors and Actuators, A: Physical. 46-47:1995;113-120.
19. Cozma A., Puers B. Characterization of the electrostatic bonding of silicon and Pyrex glass. Journal of Micromechanics and Microengineering. (5):1995;98-102.