Strain fields in InAs/GaAs quantum wire structures: Inclusion versus inhomogeneity

Journal of Applied Physics

Volumn 98, Issue 1, 2005, Pages

  Pan, E ^a   Han, F ^a   Albrecht, J D ^b  

^a UNIVERSITY OF AKRON   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY INTEGRAL EQUATIONS; QUANTUM WIRE NANOSTRUCTURES; SEMICONDUCTOR STRUCTURE; STRAIN FIELDS;

APPROXIMATION THEORY; CONFORMAL MAPPING; CRYSTAL LATTICES; ELECTRON ENERGY LEVELS; INTEGRAL EQUATIONS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN;

SEMICONDUCTOR QUANTUM WIRES;

EID: 22944478360     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1948510     Document Type: Article

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