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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 11 PART A, 1997, Pages

Hydrogen molecules in defective silicon

(9) Fukata, Naoki a Sasaki, Shinichi a Murakami, Kouichi a Ishioka, Kunie b Nakamura, Kazutaka b Kitajima, Masahiro b Fujimura, Shuzo c Kikuchi, Jun c Haneda, Hajime b

a UNIVERSITY OF TSUKUBA (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c FUJITSU LABORATORIES LTD (Japan)

Author keywords

a Si:H; Hydrogen atom treatment; Hydrogen molecule; Raman spectroscopy; c Si:H

Indexed keywords

AMORPHOUS SILICON; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; HYDROGEN; HYDROGENATION; ION IMPLANTATION; MOLECULAR VIBRATIONS; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING;

VIBRATION LINES;

SEMICONDUCTING SILICON;

EID: 0031276644 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.l1456 Document Type: Article

Times cited : (2)

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