II-VI and II1-xMnxVI semiconductor nanocrystals formed by the pressure cycle method

High Pressure Research

Volumn 25, Issue 2, 2005, Pages 119-135

  Gonzalez J ^a   Contreras, O ^a   Power, Ch ^a   Calderon, E ^a   Quintero, M ^a   Martinez GARCIA D ^b   Jose, V Muñoz San ^b   Chervin, J C ^c   Hamel, G ^c   Snoeck, E ^d   Broto, J M ^e  

^a FACULTAD DE CIENCIAS   (Venezuela)

^b UNIVERSITY OF VALENCIA   (Spain)

^c UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

^d CEMES CNRS   (France)

^e UNIVERSITÉ PAUL SABATIER   (France)

Author keywords

High pressure; Phase transitions; Quantum dots; Semiconductors

Indexed keywords

CRYSTALS; ELECTRON DIFFRACTION; HIGH PRESSURE EFFECTS; MAGNETIC HYSTERESIS; MAGNETIZATION; OPTICAL PROPERTIES; PHASE TRANSITIONS; RAMAN SCATTERING; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ATOMIC MOMENTS; COERSIVE FORCES; HIGH PRESSURE; NANOCRYSTALS; PRESSURE CYCLE METHOD;

NANOSTRUCTURED MATERIALS;

EID: 22744438654     PISSN: 08957959     EISSN: None     Source Type: Journal    
DOI: 10.1080/08957950500155413     Document Type: Article

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