Influence of Ga on the luminescence efficiency of Er-doped Ge-s-Ga glasses

Journal of Materials Science: Materials in Electronics

Volumn 14, Issue 10-12, 2003, Pages 761-762

  Ivanova, Z G ^a   Aneva, Z ^a   Cernosek, Z ^b   Cernoskova, E ^b   Vassilev, V S ^c  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b UNIVERSITY OF PARDUBICE   (Czech Republic)

^c UNIVERSITY OF CHEMICAL TECHNOLOGY AND METALLURGY   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON ENERGY LEVELS; PHOTOLUMINESCENCE; RAMAN SCATTERING;

EMISSION BANDS;

GLASS;

EID: 0242304434     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1026128515241     Document Type: Conference Paper

References (7)

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