Effects of boron penetration and resultant limitations in ultra thin pure-oxide and nitrided-oxide gate-films

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1990, Pages 429-432

  Morimoto, Toyota ^a   Momose, Hisayo Sasaki ^a   Ozawa, Yoshio ^a   Yamabe, Kikuo ^a   Iwai, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN OXIDES; SEMICONDUCTING FILMS;

BORON PENETRATION; NITRIDED OXIDE GATES; NITRIDED-OXIDE GATE FILMS; PMOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025577329     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)