Band alignment in GaInNPGaAs heterostructures grown by gas-source molecular-beam epitaxy

Applied Physics Letters

Volumn 86, Issue 26, 2005, Pages 1-3

  Izadifard, M ^a   Mtchedlidze, T ^a   Vorona, I ^a   Chen, W M ^a   Buyanova, I A ^a   Hong, Y G ^b   Tu, C W ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS (CD); LOW-TEMPERATURE PHOTOLUMINESCENCE (PL); OPTICAL EXCITATION; OPTICALLY DETECTED CYCLOTRON RESONANCE (ODCR);

GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERFACES (MATERIALS); LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

HETEROJUNCTIONS;

EID: 22144477563     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1952586     Document Type: Article

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