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Volumn 281, Issue 2-4, 2005, Pages 426-431

Nd:GdVO4 thin films grown on La3Ga 5SiO14 (LGS) and sapphire substrates by pulsed laser deposition properties

(12) Li, Hongxia a Wang, Jiyang a Zhang, Huaijin a Yu, Guangwei a Wang, Xiaoxia a Fang, Liang b Shen, Mingrong b Ning, Zhaoyuan b Yang, Jing b Li, Shiling a Wang, Xuelin a Wang, Keming a

a SHANDONG UNIVERSITY (China)

b SOOCHOW UNIVERSITY (China)

Author keywords

A1. Atomic force microscopy; A3. Pulsed laser deposition; B1. Optical waveguide

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; CRYSTALLIZATION; GADOLINIUM COMPOUNDS; LANTHANUM COMPOUNDS; LASERS; NEODYMIUM; OPTICAL WAVEGUIDES; PULSED LASER DEPOSITION; SAPPHIRE; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

DIODE PUMPED WAVEGUIDE LASERS; PACKING DENSITY; PRISM COUPLING METHOD; WAVEGUIDE LASERS;

THIN FILMS;

EID: 22144457640 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.04.032 Document Type: Article

Times cited : (6)

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