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Journal of Crystal Growth

Volumn 281, Issue 2-4, 2005, Pages 556-562

Growth of SiC-C nanocables on SiO2 films derived by gaseous composition control using Ti

(6) Lee, Ki Hong a Seo, Won Seon b Lee, Youngho b Lee, Myung Hyun b Song, Sun Ju a Sigmund, Wolfgang a

a University of Florida (United States)

b Korea Institute of Ceramic Engineering and Technology (KICET) (South Korea)

Author keywords

A1. Nanostructures; B1. Nanomaterials; B2. Semiconducting silicon compound

Indexed keywords

AMORPHOUS MATERIALS; CARBON NANOTUBES; FILM GROWTH; HYDROGEN; METHANE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; SYNTHESIS (CHEMICAL); TITANIUM CARBIDE;

GAS COMPOSITION; NANOELECTRONIC DEVICES; NANOMATERIALS; NANOSTRUCTURE; QUANTUM NANOWIRES; SILICON CARBIDE NANOWIRES (SICNW);

NANOSTRUCTURED MATERIALS;

EID: 22144438023 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.04.076 Document Type: Article

Times cited : (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.