MOCVD growth and properties of ZnO films using dimethylzinc and oxygen

Applied Physics A: Materials Science and Processing

Volumn 81, Issue 4, 2005, Pages 809-812

  Ye, J D ^a   Gu, S L ^a   Qin, F ^a   Zhu, S M ^a   Liu, S M ^a   Zhou, X ^a   Liu, W ^a   Hu, L Q ^a   Zhang, R ^a   Shi, Y ^a   Zheng, Y D ^a   Ye, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; OXYGEN; PHOTOLUMINESCENCE; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIMETHYLZINC (DMZN); LUMINESCENCE EFFICIENCY; PHOTO-EXCITED ELECTRONS; PHOTON ENERGY;

ZINC OXIDE;

EID: 22044444601     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-2865-x     Document Type: Article

References (21)

1. T. Aoki, Y. Hatanaka: Appl. Phys. Lett. 76(22), 3257 (2000)
2. C.R. Miskys, M.K. Kelly, O. Ambacher, C.G. Martinez, M. Stutzmann: Appl. Phys. Lett. 77(12), 1858 (2000)
3. K. Ogata, S.W. Kim, S. Fujita, S. Fujita: J. Crystal Growth 240, 112 (2002)
4. T. Gruber, C. Kirchner, K. Thonke, R. Sauer, A. Waag: Phys. Status Solid A 192(1), 166 (2002)
5. J.D. Ye, S.L. Gu, S.M. Zhu, T. Chen, L.Q. Hu, F. Qin, R. Zhang, Y. Shi, Y.D. Zheng: J. Crystal Growth 243, 151 (2002)
6. N. Oleynik, M. Adam, A. Krtschil, J. Blasing, A. Dadgar, F. Bertram, D. Forster, A. Diez, A. Greiling, M. Seip, J. Christen, A. Krost: J. Crystal Growth 248, 14 (2003)
7. A. Ashrafi, I. Suemune, H. Kumano: Jpn. J. Appl. Phys. 41, 2851 (2002)
8. Frank T.J. Smith: Appl. Phys. Lett. 43(12), 1108 (1993)
9. V. Gupta, A. Mansingh: J. Appl. Phys. 80(2), 1063 (1996)
10. B.J. Coppa, R.F. Davis, R.J. Nemanich: Appl. Phys. Lett. 82(3), 400 (2003)
11. M. Chen, X. Wang, Y.H. Yu. Z.L. Pei, X.D. Bai, C. Sun, R.F. Huang, L.S. Wen: Appl. Surf. Sci. 158, 134 (2000)
12. Y. Fujita: J. Crystal Growth 221, 382 (2000)
13. W.S. Shi, O. Agyeman, C.N. Xu: J. Appl. Phys. 91(9), 5640 (2002)
14. Y. Sun, J.B. Ketterson, G.K.L. Wong: Appl. Phys. Lett. 77, 2322 (2000)
15. F. Oba, S.R. Nishitani, S. Isotani, H. Adachi, I. Tanaka: J. Appl. Phys. 90(2), 824 (2001)
16. S.B. Zhang, S.H. Wei, A. Zunger: Phys. Rev. B 63(7) 075205 (2001)
17. Z.B. Fang, H. X Gong, X.Q. Liu, D.Y. Xu, C.M. Huang, Y.Y. Wang: Acta Phys. Sin. 52(7), 1748 (2003)
18. B. Lin, Z. Fu, Y. Jia: Appl. Phys. Lett. 79(7), 943 (2001)
19. F.H. Leiter, H.R. Alves, A. Hofstaetter, D.M. Hofmann, B.K. Meyer: Phys. Status Solid B 226, R4 (2001)
20. K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt, B.E. Gnade: J. Appl. Phys. 79, 7983 (1996)
21. O. Agyeman, C.N. Xu, W.S. Shi, X.G. Sheng, M. Suzuki: Jpn. J. Appl. Phys. 41, 666 (2002)