A model for doping-induced band gap narrowing in 3C-, 4H-, and 6H-SiC

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 225-228

  Lindefelt, U ^a,b,c  

^a ABB CORPORATE RESEARCH   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Band edge displacements; Band gap narrowing

Indexed keywords

APPROXIMATION THEORY; CHARGE CARRIERS; COMPOSITION EFFECTS; CORRELATION METHODS; ELECTRON GAS; ENERGY GAP; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

BAND GAP NARROWING; PLASMON-POLE APPROXIMATION;

SILICON CARBIDE;

EID: 21944448227     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00507-8     Document Type: Article

References (6)

1. Jain S., Roulston D.J. Solid-State Electron. 34:1991;453-465.
2. Bergren K-F., Sernelius B.E. Phys. Rev. B42:1981;1971-1986.
3. Mahan G.D. J. Appl. Phys. 51:1980;2634-2646.
4. Persson C., Lindefelt U. J. Appl. Phys. 82:1997;5496-5508.
5. Persson C., Lindefelt U. Phys. Rev. B54:1996;10257-10260.
6. Lindefelt U. J. Appl. Phys. 84:1998;2628-2637.