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Volumn 72, Issue 21, 1998, Pages 2683-2685

Influence of oxygen plasma treatments on the structural properties of c-Si

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[No Author keywords available]

Indexed keywords


EID: 21944434872     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121098     Document Type: Article
Times cited : (4)

References (17)
  • 2
    • 0004219485 scopus 로고
    • in edited by R. K. Willardson and A. C. Beer Academic, San Diego
    • J. I. Pankove and N. M. Johnson, in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, San Diego, 1991), Vol. 34.
    • (1991) Semiconductors and Semimetals , pp. 34
    • Pankove, J.I.1    Johnson, N.M.2
  • 13
    • 77957013172 scopus 로고
    • in edited by F. Shimura Academic, San Diego
    • R. C. Newman and R. Jones, in Oxygen in Silicon, edited by F. Shimura (Academic, San Diego, 1994), Vol. 42, p. 289.
    • (1994) Oxygen in Silicon , vol.42 , pp. 289
    • Newman, R.C.1    Jones, R.2
  • 15
    • 0019666655 scopus 로고
    • in Defects in Semiconductors, edited by J. Narayan and T. Y. Tan North-Holland, Amsterdam
    • F. A. Ponce, T. Yamashita, R. H. Bube, and R. Sinclair, in Defects in Semiconductors, edited by J. Narayan and T. Y. Tan (North-Holland, Amsterdam, 1981), Mater. Res. Soc. Symp. Proc. 2, p. 503.
    • (1981) Mater. Res. Soc. Symp. Proc. , vol.2 , pp. 503
    • Ponce, F.A.1    Yamashita, T.2    Bube, R.H.3    Sinclair, R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.