Highly-reliable ultra-thin oxide formation using hydrogen-radical-balanced steam oxidation technology

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1994, Pages 161-166

  Ohmi, T ^a   Nakamura, K ^a   Makihara, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; FILM GROWTH; HYDROGEN; LEAKAGE CURRENTS; OXIDATION; THIN FILMS;

CONTAMINATION CONTROL TECHNOLOGY; HIGHLY RELIABLE ULTRA THIN OXIDE FORMATION; HYDROGEN RADICAL BALANCED STEAM OXIDATION TECHNOLOGY;

ULSI CIRCUITS;

EID: 0028257883     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1994.307842     Document Type: Conference Paper

References (14)