Investigation of fabricating ultra deep and high aspect ratio electrical isolation trench without void

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 3, Issue , 2004, Pages 1892-1895

  Zhu, Yong ^a   Fan, Jie ^a   Wang, Chengwei ^a   Zhou, Jian ^a   Liu, Xuesong ^a   Yan, Guizhen ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

DRIE; High aspect ratio; Isolation trench; MEMS; Monolithic integration

Indexed keywords

ASPECT RATIO; CURRENT VOLTAGE CHARACTERISTICS; CURVE FITTING; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; INSULATING MATERIALS; POLYSILICON; REACTIVE ION ETCHING;

DEEP REACTIVE ION ETCHING (DRIE); HIGH ASPECT RATIO; ISOLATION TRENCH; MONOLITHIC INTEGRATION;

MICROMACHINING;

EID: 21644479006     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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