Detailed study of above bandgap optical absorption in HgCdTe

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 773-778

  Moazzami, K ^a   Phillips, J ^a   Lee, D ^b   Krishnamurthy, S ^c   Benoit, G ^d   Fink, Y ^d   Tiwald, T ^e  

^a UNIVERSITY OF MICHIGAN   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

^c SRI INTERNATIONAL   (United States)

^d Massachusetts Institute of Technology   (United States)

^e J A WOOLLAM CO INC   (United States)

Author keywords

HgCdTe; Infrared (IR) detector; Optical absorption coefficient; Spectroscopic ellipsometry; Transmission

Indexed keywords

ELLIPSOMETRY; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; RADIATION DETECTORS;

HGCDTE; INFRARED (IR) DETECTORS; OPTICAL ABSORPTION COEFFICIENT; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTOR MATERIALS;

EID: 21644470477     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0019-3     Document Type: Conference Paper

References (8)

1. C.A. Hougen, J. Appl. Phys. 66, 3763 (1989).
2. E. Finkman and S.E. Schacham, J. Appl. Phys. 56, 2896 (1984).
3. Y. Chang, G. Badano, J. Zhao, Y.D. Zhou, R. Ashokan, C.H. Grein, and V. Nathan, J. Electron. Mater. 33, 709 (2004).
4. K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian, and J. Arias, J. Electron. Mater. 33, 701 (2004).
5. S. Krishnamurthy and A. Sher, J. Electron. Mater. 24, 641 (1995).
6. K. Moazzami, D. Liao, J.D. Phillips, D.L. Lee, M. Carmody, M. Zandian, and D.D. Edwall, J. Electron. Mater. 32, 646 (2003).
7. Z. Kucera, Phys. Status Solidi (a) 100, 659 (1987).
8. G.L. Hansen, J.L. Schmit, and T.N. Casselman, J. Appl. Phys. 53, 7099 (1982).