Temperature, thickness, and interfacial composition effects on the absorption properties of (Hg,Cd)Te epilayers grown by liquid-phase epitaxy on CdZnTe

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 768-772

  Littler, C L ^a   Gorman, B P ^a   Weirauch, D F ^b   Liao, P K ^a,b   Schaake, H F ^a,b  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b DRS Sensors and Targeting Systems Inc   (United States)

Author keywords

Band gap; HgCdTe; Infrared (IR) detector material; Liquid phase epitaxy (LPE); Optical absorption

Indexed keywords

ENERGY GAP; LIGHT ABSORPTION; LIQUID PHASE EPITAXY; RADIATION DETECTORS; THICKNESS CONTROL; THIN FILMS;

BAND GAP; COMPOSITION GRADIENT; HGCDTE; INFRARED (IR) DETECTOR MATERIAL;

SEMICONDUCTOR MATERIALS;

EID: 21644468495     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0018-4     Document Type: Conference Paper

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