Al ohmic contacts to HCl-treated MgxZn1-xO

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 754-757

  Sheng, H ^a   Saraf, G ^a   Emanetoglu, N W ^a   Hill, D H ^b   Lu, Y ^a  

^a RUTGERS UNIVERSITY   (United States)

^b State University of New Jersey   (United States)

Author keywords

Doping; Metalorganic chemical vapor deposition (MOCVD); Ohmic contact; Thin films; Wide band gap material; Zinc oxide (ZnO)

Indexed keywords

DOPING (ADDITIVES); ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION; ZINC OXIDE;

OHMIC CONTACT; SEMICONDUCTOR SURFACE; VACANCY DENSITY; WIDE BAND-GAP MATERIAL;

THIN FILMS;

EID: 21644466678     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0015-7     Document Type: Conference Paper

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