Effective bit addressing times for precessional switching of magnetic memory cells

Journal of Applied Physics

Volumn 97, Issue 12, 2005, Pages

  Schumacher, H W ^a   Chappert, C ^b   Sousa, R C ^c   Freitas, P P ^c  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b UNIV PARIS SUD   (France)

^c INESC   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETS; MAGNETIC LAYER STACKS; OPTICAL MICROGRAPH; PRECESSIONAL SWITCHING;

ALUMINUM; LITHOGRAPHY; MAGNETIC FIELD EFFECTS; MAGNETIZATION; SPUTTER DEPOSITION; SWITCHING; ULTRAFAST PHENOMENA;

RANDOM ACCESS STORAGE;

EID: 21644459699     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1935765     Document Type: Article

References (21)

1. M. Bauer, Phys. Rev. B 61, 3410 (2000).
2. J. Miltat, G. Alburquerque, and A. Thiaville, in Spin Dynamics in Confined Magnetic Structures, edited by, B. Hillebrands, and, K. Ounadjela, (Springer, Berlin, 2001).
3. C. H. Back, D. Weller, J. Heidmann, D. Mauri, D. Guarisco, E. L. Garwin, and H. C. Siegmann, Phys. Rev. Lett. 81, 3251 (1998).
4. S. S. P. Parkin, J. Appl. Phys. 85, 5828 (1999).
5. S. Tehrani, IEEE Trans. Magn. 36, 2752 (2000).
6. S. Kaka and S. E. Russek, Appl. Phys. Lett. 80, 2958 (2002).
7. H. W. Schumacher, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.90.017201 90, 017201 (2003); H. W. Schumacher, Phys. Rev. Lett. 90, 017204 (2003).
8. H. W. Schumacher, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.90.017201 90, 017201 (2003); H. W. Schumacher, Phys. Rev. Lett. 90, 017204 (2003).
9. H. W. Schumacher, J. Appl. Phys. 93, 7290 (2003).
10. Th. Gerrits, Nature (London) 418, 509 (2002).
11. W. K. Hiebert, L. Lagae, and J. De Boeck, Phys. Rev. B 68, 020402 (R) (2003).
12. W. K. Hiebert, L. Lagae, J. Das, J. Bekaert, R. Wirix-Speetjens, and J. De Boeck, J. Appl. Phys. 93, 6906 (2003).
13. A. Krichevsky and M. R. Freeman, J. Appl. Phys. 95, 6601 (2004).
14. T. Devolder and C. Chappert, J. Appl. Phys. 95, 1933 (2004).
15. R. H. Koch, Phys. Rev. Lett. 81, 4512 (1998).
16. H. W. Schumacher, Appl. Phys. Lett. 80, 3781 (2002).
17. B. Dieny, Phys. Rev. B 43, 1297 (1991).
18. L. Landau and E. Lifshitz, Phys. Z. Sowjetunion 0369-9811 8, 153 (1935); T. L. Gilbert, Phys. Rev. 100, 1243 (1955).
19. L. Landau and E. Lifshitz, Phys. Z. Sowjetunion 0369-9811 8, 153 (1935); T. L. Gilbert, Phys. Rev. 100, 1243 (1955).
20. Additionally, the breaking up of the free layer into domains (Ref. 7) could also be a reason for the reduction of the measured final TMR. However, the square hysteresis loop speaks for rather stable mainly single-domain states. Although from the sampling measurements we cannot distinguish these two effects the conclusions are the same: In the transitional regime switching is unreliable and cannot be used for MRAM operation.
21. J. DeBrosse, IEEE J. Solid-State Circuits 39, 678 (2004).