High-voltage extension (VBR ≥ 800 V) for smart-power SOI-technologies

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 447-450

  Rotter, Thomas ^a   Stoisiek, Michael ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTATIONAL COMPLEXITY; ELECTRIC POTENTIAL; ELECTRIC SWITCHES; INTEGRATED CIRCUITS; MICROPROCESSOR CHIPS;

BLOCKING CAPABILITY; HIGH-VOLTAGE EXTENSION; SINGLE-CHIPS; UNIVERSAL BIPOLAR SWITCHES (UBS);

SILICON ON INSULATOR TECHNOLOGY;

BLOCKING CAPABILITY; EXPERIMENTAL VERIFICATION; HIGH VOLTAGE DEVICES; HIGH-VOLTAGE EXTENSION; PROPERTY; SMART POWER; SOI TECHNOLOGY; UNIVERSAL BIPOLAR SWITCHES;

EID: 21644459547     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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