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Volumn 97, Issue 12, 2005, Pages

A heuristic approach to precisely represent optical absorption and refractive index data for photon energies below, at, and above the band gap of semiconductors: The case of high-purity GaAs. Part I

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; KRAMERS-KRÖNIG TRANSFORMATION; PHOTON ENERGIES; QUASIEQUILIBRIUM CARRIER DENSITIES;

EID: 21644459429     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1935767     Document Type: Article
Times cited : (21)

References (46)
  • 19
  • 27
    • 84856128395 scopus 로고
    • thesis, Ecole Polytechnique F́d́rale de Lausanne
    • M. Proctor, thesis, Ecole Polytechnique F́d́rale de Lausanne, 1993.
    • (1993)
    • Proctor, M.1
  • 36
    • 0004071609 scopus 로고
    • Cambridge University Press, Cambridge
    • A. H. Wilson, Theory of Metals (Cambridge University Press, Cambridge, 1953).
    • (1953) Theory of Metals
    • Wilson, A.H.1
  • 37
    • 2142728855 scopus 로고
    • edited by S. S.Mitra and S.Nadelsoman (Plenum, New York
    • A. S. Barker, in Far Infrared Properties of Solids edited by, S. S. Mitra, and, S. Nadelsoman, (Plenum, New York, 1970).
    • (1970) Far Infrared Properties of Solids
    • Barker, A.S.1
  • 46
    • 21644477940 scopus 로고    scopus 로고
    • note
    • At 297 K, the index of refraction at 1.425 eV due to the high-energy critical points is 3.346 and 3.451 for the KK and analytic fit, respectively. In the literature, there is usually no mention to only use this contribution. If we take the full index of refraction, we realize that the group refractive index can become negative according to Fig. 7. This fact would lead to a negative density of optical states that is meaningless physically.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.