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Volumn , Issue , 2004, Pages 291-294

Low phase noise 2 GHz HBT push-push VCO based on an advanced low frequency noise model

Author keywords

[No Author keywords available]

Indexed keywords

LOW FREQUENCY NOISE; PHASE NOISE; PUSH-PUSH TOPOLOGY; VOLTAGE CONTROL OSCILLATORS (VCO);

EID: 21644455123     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2004.1392570     Document Type: Conference Paper
Times cited : (3)

References (8)
  • 1
    • 0035246302 scopus 로고    scopus 로고
    • Low-frequency noise of InP/InGaAS Heterojunction Bipolar Transistors
    • A. Pénarier et al "Low-frequency noise of InP/InGaAS Heterojunction Bipolar Transistors", Jpn. J. Appl. Phys., 2001, 40, pp 525-529.
    • (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 525-529
    • Pénarier, A.1
  • 3
    • 0023344698 scopus 로고
    • Flicker (1/f) noise generated by random walk of electrons in interfaces
    • May
    • O. Jantsch, "Flicker (1/f) noise generated by random walk of electrons in interfaces", IEEE Transations on Electron Devices, Vol. ED 34, May1987, pp 1100-1115
    • (1987) IEEE Transations on Electron Devices , vol.ED 34 , pp. 1100-1115
    • Jantsch, O.1
  • 4
    • 0000725459 scopus 로고    scopus 로고
    • Microscopic analysis of generation-recombination noise in semiconductors under dc and time varying electric fields
    • 15 July
    • S. Perez et al. "Microscopic analysis of generation-recombination noise in semiconductors under dc and time varying electric fields", Journal of applied Physics, vol 88, no 2,15 July 2000
    • (2000) Journal of Applied Physics , vol.88 , Issue.2
    • Perez, S.1
  • 5
    • 0002430363 scopus 로고    scopus 로고
    • Noise analysis in devices under nonlinear operation
    • A. Cappy, F. Danneville, et al. "Noise analysis in devices under nonlinear operation", Solid-state electronics, vol43, 1999, pp 21-26
    • (1999) Solid-state Electronics , vol.43 , pp. 21-26
    • Cappy, A.1    Danneville, F.2
  • 6
    • 0042490772 scopus 로고    scopus 로고
    • Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models
    • May
    • J.E. Sanchez, G. Bosman and M.E. Law "Two-Dimensional Semiconductor Device Simulation of Trap-Assisted Generation-Recombination Noise Under Periodic Large-Signal Conditions and Its Use for Developing Cyclostationary Circuit Simulation Models." IEEE Transations on Electron Devices, Vol. ED 50, No5, May 2003, pp 1353-1362.
    • (2003) IEEE Transations on Electron Devices , vol.ED 50 , Issue.5 , pp. 1353-1362
    • Sanchez, J.E.1    Bosman, G.2    Law, M.E.3
  • 7
    • 0036712371 scopus 로고    scopus 로고
    • Noise source modeling for cyclostationary noise analysis in large-signal device operation
    • sept.
    • F.Bonani, S. Donati Guerrieri, G. Ghione, "Noise source modeling for cyclostationary noise analysis in large-signal device operation", IEEE Trans. On Electron Devices, Vol. 49, Issue 9, sept.2002, pp 1640-164.
    • (2002) IEEE Trans. on Electron Devices , vol.49 , Issue.9 , pp. 1640-2164
    • Bonani, F.1    Guerrieri, S.D.2    Ghione, G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.