High performance 27 nm gate length CMOS device with EOT 1.4nm gate oxynitride and strained technology

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 1, Issue , 2004, Pages 47-52

  Xu, Qiuxia ^a   Qian, He ^a   Liu, Ming ^a   Han, Zhengsheng ^a   Chen, Baoqing ^a   Yin, Huaxiang ^a   Lin, Gang ^a   Zhu, Yajiang ^a   Ye, Tianchun ^a   Wu, Denxin ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION LENGTH; DRIVE CURRENT; PRE-AMORPHIZATION IMPLANTATION (PAI); SHORT CHANNEL EFFECTS (SCE);

CARRIER MOBILITY; CHANNEL CAPACITY; CHEMICAL VAPOR DEPOSITION; LEAKAGE CURRENTS; LOGIC GATES; MATHEMATICAL MODELS; MOSFET DEVICES; POLYSILICON;

CMOS INTEGRATED CIRCUITS;

EID: 21644448502     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. K. Rim et al., Symp. On VLSI Tech.,p.59 (2001)
2. J.L.Hoyt et al., IEDM Tech. Dig., p.23, (2002)
3. Guofu Niu,et al., IEEE Trans.ED-46, p.1912 (1999)
4. Y.Okada et al., IEEE Trans. ED-41, P. 1608 (1994)
5. [on line] Available: http/www.device.eecs.berkeley.edu/qmcv.html
6. F.H.Bell, and O.Joubert, J. Vac. Sci. Technol. B15, p.88 (1997)
7. Qiuxia Xu et al., IEEE Trans. ED-48, P. 1412 (2001)
8. T.Ohguro et al., IEEE Trans. ED-41, P. 2305 (1994)