Semi-insulating CdTe with a minimized deep-level doping

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 939-943

  Grill, R ^a   Franc, J ^a   Turkevych, I ^a   Hoschl P ^a   Belas, E ^a   Moravec, P ^a  

^a CHARLES UNIVERSITY   (Czech Republic)

Author keywords

CdTe; Deep defect; Detector; Self compensation

Indexed keywords

CRYSTALS; DETECTORS; DIFFUSION; DOPING (ADDITIVES); ENTROPY; ESTIMATION; EXTRAPOLATION; INSULATING MATERIALS; MATHEMATICAL MODELS; THERMAL EFFECTS;

CDTE; DEEP DEFECT; DEEP-LEVEL DOPING; SELF-COMPENSATION;

CADMIUM COMPOUNDS;

EID: 21644446114     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0046-0     Document Type: Conference Paper

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