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Volumn , Issue , 2004, Pages 8-11

13-D microsystems: A move from sensing to understanding the battlespace

Author keywords

[No Author keywords available]

Indexed keywords

3-D MICROSYSTEMS; BATTLESPACE; ELECTRIC FIELD DENSITY; TARGET ACQUISITION;

EID: 21644440766     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2004.1392469     Document Type: Conference Paper
Times cited : (4)

References (13)
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    • Dallmann, D.A.1    Shenai, K.2
  • 3
    • 0031071452 scopus 로고    scopus 로고
    • The impact of stochastic dopant and interconnect distributions on Gigascale Integration (GSI)
    • Meindl, J. D., et al., The Impact of Stochastic Dopant and Interconnect Distributions on Gigascale Integration (GSI), IEEE ISSCC, vol.40, pp. 232-233, 1997.
    • (1997) IEEE ISSCC , vol.40 , pp. 232-233
    • Meindl, J.D.1
  • 4
    • 0033723263 scopus 로고    scopus 로고
    • The future of CMOS technology
    • Isaac, R. D., The Future of CMOS Technology, IBM J. Res. Develop., vol. 44, pp. 369-378, 2000.
    • (2000) IBM J. Res. Develop. , vol.44 , pp. 369-378
    • Isaac, R.D.1
  • 5
    • 33747566850 scopus 로고    scopus 로고
    • 3-DICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration
    • Bannerjee, K., et al., 3-DICs: A Novel Chip Design for Improving Deep-Submicrometer Interconnect Performance and Systems-on-Chip Integration, Proc. IEEE, vol. 89, pp. 602-633, 2001.
    • (2001) Proc. IEEE , vol.89 , pp. 602-633
    • Bannerjee, K.1
  • 6
    • 0018730792 scopus 로고
    • Crystalline siliconon insulators by graphoepitaxy
    • Geis, M. W., et al., Crystalline Siliconon Insulators by Graphoepitaxy, IEDM Tech. Dig., pp. 210-212, 1979.
    • (1979) IEDM Tech. Dig. , pp. 210-212
    • Geis, M.W.1
  • 7
    • 0019707937 scopus 로고
    • ST-CMOS (Stacked Transistor CMOS): A double-poly-NMOS-compatible CMOS technology
    • Colinge, J. P., and E. Demoulin, ST-CMOS (Stacked Transistor CMOS): A Double-Poly-NMOS-Compatible CMOS Technology, IEDM Tech. Dig., pp. 557-560, 1981.
    • (1981) IEDM Tech. Dig. , pp. 557-560
    • Colinge, J.P.1    Demoulin, E.2
  • 8
    • 0020830181 scopus 로고
    • Three-dimensional CMOS IC's fabricated by using beam recrystallization
    • Oct.
    • Kawamura, S., et al., Three-Dimensional CMOS IC's Fabricated by Using Beam Recrystallization, IEEE Electron Device Lett., vol. EDL-4, pp. 366-368, Oct. 1983.
    • (1983) IEEE Electron Device Lett. , vol.EDL-4 , pp. 366-368
    • Kawamura, S.1
  • 9
    • 0020949988 scopus 로고
    • Multilayer CMOS device fabricated on laser recrystallized silicon Islands
    • Akiyama, S., et al., Multilayer CMOS Device Fabricated on Laser Recrystallized Silicon Islands, IEDM Tech. Dig., pp. 352-355, 1983.
    • (1983) IEDM Tech. Dig. , pp. 352-355
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  • 10
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    • 3-D SOI/CMOS
    • Nakano, M., 3-D SOI/CMOS, IEDM Tech. Dig., pp. 792-795, 1984.
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  • 11
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    • Mar.
    • Sugahara, S., et al, SOI/SOI/Bulk-Si Triple Level Structure for Three-Dimensional Devices, IEEE Electron Device Lett., vol. EDL-7, pp. 193-195, Mar. 1986.
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  • 12
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    • Japan's push into creative semiconductor research: 3-Dimension IC's
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.